Semiconductor constructions

ABSTRACT

The invention includes a semiconductor construction having a pair of channel regions that have sub-regions doped with indium and surrounded by boron. A pair of transistor constructions are located over the channel regions and are separated by an isolation region. The transistors have gates that are wider than the underlying sub-regions. The invention also includes a semiconductor construction that has transistor constructions with insulative spacers along gate sidewalls. Each transistor construction is between a pair source/drain regions that extend beneath the spacers. A source/drain extension extends the source/drain region farther beneath the transistor constructions on only one side of each of the transistor constructions. The invention also includes methods of forming semiconductor constructions.

TECHNICAL FIELD

The invention pertains to semiconductor constructions and methods offorming semiconductor constructions. In particular aspects, theinvention pertains to methods of forming DRAM constructions.

BACKGROUND OF THE INVENTION

Electrical isolation is commonly utilized in semiconductor constructionsto alleviate, or prevent, leakage between electrical devices. Forinstance, it is frequently desired in dynamic random access memory(DRAM) fabrication to avoid sub-threshold leakage between access devices(such as, for example, access transistor constructions). There can beseveral facets which influence leakage currents between field effecttransistor devices, including, for example, junction leakage insource/drain regions; drain-induced barrier lowering (DIBL) due to shortgate lengths; gate-induced drain leakage (GIDL) due to high electricfields in a gate overlap region; narrow-width effects; andstress-induced leakage current (SILC) due to a proximity of an isolationregion to a device.

A ratio of I_(on) (drive current) to I_(off) (sub-threshold leakage) canbe utilized as a figure of merit for determining if access devices areperforming adequately. It is found that reducing gate oxide thickness ofaccess devices can improve a sub-threshold behavior of the devices whilesimultaneously increasing a drive current. However, a threshold voltageof a device reduces with the decrease in gate oxide thickness.Increasing dopant levels in channels of the devices can increase thethreshold voltage to an acceptable level and compensate for thereduction in gate oxide thickness, but can increase junction leakage insource/drain regions. Additionally, the increased dopant level in achannel of a device can adversely cause junction capacitance toincrease, cause channel mobility reduction, and reduce the current driveof the device.

It would be desirable to develop new methods for reducing sub-thresholdleakage of devices. It would be further desirable if such new methodsavoided increasing dopant concentration in channel regions of accessdevices. Additionally, it would be desirable if such new methods couldbe utilized for forming structures suitable for electrical isolation inan integrated circuit construction.

SUMMARY OF THE INVENTION

In one aspect, the invention encompasses a semiconductor constructionhaving a pair of channel regions within a semiconductor substrate. Eachof the channel regions has a sub-region which is doped with indium orheavy atom acceptor atoms such as Ga or TI. The channel also containsboron surrounding the sub-region. A pair of transistor constructions isdisposed over the semiconductor substrate, each of the transistorconstructions is disposed over one of the channel regions. The pair oftransistor constructions is separated by an isolation region whichisolates the transistor constructions from one another. Each transistorconstruction has a transistor gate that is substantially laterallycentered over the corresponding channel region. Each of the gates iswider than the underlying indium doped sub-region.

In one aspect, the invention encompasses a semiconductor constructionhaving a first and a second transistor construction over asemiconductive substrate material. Each of the first and secondtransistor constructions has opposing sidewalls and a pair of insulativespacers along the sidewalls. The first transistor construction isdisposed between a first and a second source/drain region within thesubstrate. A first end of the first source/drain region extends beneaththe spacer on a first side of the first transistor construction and thesecond source/drain region extends beneath the spacer on an opposingsecond side of the first transistor construction. The second transistorconstruction is disposed between a third and a fourth source/drainregion within the substrate. A first side of the fourth source/drainregion extends beneath the spacer on a first side of the secondtransistor construction. The third source/drain region extends beneaththe spacer on an opposing second side of the second transistorconstruction. The first, second, third and fourth source/drain regionsare commonly doped with a first type of dopant. A source/drain extensionwhich is doped with a second type of dopant is associated with the firstside of the first source/drain region and extends the first side of thefirst source/drain region farther beneath the first transistorconstruction. Source/drain extensions are absent from a second side ofthe first source/drain region and are also absent from the secondsource/drain region.

The invention also encompasses methods of forming semiconductorconstructions.

BRIEF DESCRIPTION OF THE DRAWINGS

Preferred embodiments of the invention are described below withreference to the following accompanying drawings.

FIG. 1 is a diagrammatic, cross-sectional view of a fragment of asemiconductor wafer construction which can be formed in particularembodiments of the present invention.

FIG. 2 is a diagrammatic, cross-sectional view of a fragment of asemiconductor wafer construction at a preliminary stage of a fabricationsequence which can be utilized in forming the FIG. 1 structure.

FIG. 3 is a view of the FIG. 2 wafer fragment shown at a processingstage subsequent to that of FIG. 2.

FIG. 4 is a view of the FIG. 2 fragment shown at a processing stagesubsequent to that of FIG. 3.

FIG. 5 is a view of the FIG. 2 fragment shown at a processing stagesubsequent to that of FIG. 4.

FIG. 6 is a view of the FIG. 2 fragment shown at a processing stagesubsequent to that of FIG. 5.

FIG. 7 is a view of the FIG. 2 fragment shown at a processing stagesubsequent to that of FIG. 6.

FIG. 8 is a view of the FIG. 2 fragment shown at a processing stagesubsequent to that of FIG. 7.

FIG. 9 is a view of the FIG. 2 fragment shown at a processing stagesubsequent to that of FIG. 8.

FIG. 10 is a view of the FIG. 2 fragment shown at a processing stagesubsequent to that of FIG. 9.

FIG. 11 is a view of the FIG. 2 fragment shown at a processing stagesubsequent to that of FIG. 10.

FIG. 12 is a view of the FIG. 2 fragment shown at a processing stagesubsequent to that of FIG. 11.

FIG. 13 is a view of the FIG. 2 fragment shown at a processing stagesubsequent to that of FIG. 12.

FIG. 14 is a diagrammatic, cross-sectional view of a fragment of asemiconductor wafer construction which can be formed in a secondembodiment of the present invention.

FIG. 15 is a view of the FIG. 2 wafer fragment shown at an alternateprocessing stage subsequent to that of FIG. 2.

FIG. 16 is a view of the FIG. 2 fragment shown at a processing stagesubsequent to that of FIG. 15.

FIG. 17 is a view of the FIG. 2 fragment shown at a processing stagesubsequent to that of FIG. 16.

FIG. 18 is a view of the FIG. 2 fragment shown at a processing stagesubsequent to that of FIG. 17.

FIG. 19 is a view of the FIG. 2 fragment shown at a processing stepsubsequent to that of FIG. 18.

FIG. 20 is a view of the FIG. 2 fragment shown at a processing stagesubsequent to that of FIG. 19.

FIG. 21 is a diagrammatic, cross-sectional view of a fragment of asemiconductor wafer construction which can be formed in a thirdembodiment of the present invention.

FIG. 22 is a diagrammatic, cross-sectional view of a fragment of asemiconductor wafer construction which can be formed in a fourthembodiment of the present invention.

FIG. 23 is a view of the FIG. 2 fragment shown at an alternativeprocessing stage of a construction similar to that shown in FIG. 14.

FIG. 24 is a view of the FIG. 2 fragment shown at a processing stepsubsequent to that of FIG. 23.

FIG. 25 is a diagrammatic, cross-sectional view of a fragment of asemiconductor wafer construction which can be formed in a fifthembodiment of the present invention.

FIG. 26 is a diagrammatic, cross-sectional view of a fragment of asemiconductor wafer construction at a preliminary stage of a fabricationsequence according to an alternative embodiment of the presentinvention.

FIG. 27 is a view of the FIG. 26 wafer fragment shown at a processingstage subsequent to that of FIG. 26.

FIG. 28 is a view of the FIG. 26 fragment shown at a processing stagesubsequent to that of FIG. 27.

FIG. 29 is a view of the FIG. 26 fragment shown at a processing stagesubsequent to that of FIG. 28.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 1 illustrates a semiconductor construction 10 encompassed byparticular aspects of the present invention. Construction 10 comprises asubstrate 12. To aid in interpretation of the claims that follow, theterms “semiconductive substrate” and “semiconductor substrate” aredefined to mean any construction comprising semiconductive material,including, but not limited to, bulk semiconductive materials such as asemiconductive wafer (either alone or in assemblies comprising othermaterials thereon), and semiconductive material layers (either alone orin assemblies comprising other materials). The term “substrate” refersto any supporting structure, including, but not limited to, thesemiconductive substrates described above.

In particular aspects, construction 10 can correspond to a DRAM array.Construction 10 comprises a pair of field effect transistor devices 14and 16 supported by substrate 12, and also comprises a device 38 havinga different threshold voltage than devices 14 and 16. Device 38 can beutilized for electrically isolating devices 14 and 16 from one anotheras discussed below.

Each of devices 14 and 16 comprises a transistor gate stack 22 whichincludes an insulative material 24, a conductively doped semiconductivematerial 26 (also referred to as a gate layer), an electricallyconductive mass 28, and an insulative cap 30.

Insulative material 24 can comprise, for example, one or more of siliconnitride, silicon dioxide and silicon oxynitride. Insulative material 24typically comprises silicon dioxide, and can be referred to as gateoxide.

Conductively-doped material 26 can comprise, for example,conductively-doped silicon. The silicon is typically in an amorphousand/or polycrystalline form. The dopant can comprise n-type dopant (suchas, for example, phosphorous or arsenic), or can comprise p-type dopant(such as, for example, boron).

Conductive mass 28 will typically comprise a layer of silicide formeddirectly on an upper surface of a silicon material 26; or a layer ofmetal formed directly on (i.e. physically against) a barrier layer ofWN_(x) or TiN, which in turn is on the silicon material 26.

Insulative cap 30 can comprise, for example, one or both of siliconnitride and silicon dioxide.

The gate stacks comprise sidewalls, and electrically insulative spacers32 are formed along such sidewalls. Spacers 32 can comprise, forexample, silicon nitride, and can be formed by depositing a materialconformally over substrate 12 and gate stacks 22, and subsequentlyanisotropically etching such material.

A plurality of source/drain regions 34 are provided within substrate 12and between gate stacks 22. Gate stacks 22 can be considered as beingdirectly over segments of substrate 12, and source/drain regions 34 canbe considered as being spaced from one another by at least portions ofsuch segments. In the shown constructions, source/drain regions 34extend the entire spacer width under spacers 32.

Source/drain regions 34 are conductively-doped diffusion regionsextending into substrate 12. Typically, transistor constructions 14 and16 will be NMOS transistors, and accordingly source/drain regions 34will be n-type doped diffusion regions. In other words, the majoritydopant within diffusion regions 34 will be n-type dopant. The term“majority dopant” refers to the dopant that is most abundant within theregions. Accordingly, if both p-type and n-type dopant are present inthe regions, the majority dopant type will be that which is mostprevalent. Additionally, it is noted that the stack 36 (discussed inmore detail below) provided between stacks 22 can be incorporated intoan NMOS transistor if a sufficient threshold voltage is provided.

The source/drain regions 34 extend under spacers 32 in the shownconstruction. It is to be understood however that other structures canbe formed in which the source/drain regions do not extend underneath thespacers, or even in which at least some of the spacers are eliminated.Additionally, source/drain regions 34 can extend beneath spacers 32 lessthan the full spacer width, can extend the full spacer-width or canextend beyond the spacer to beneath the corresponding stack (not shown).

The various source/drain regions are connected to either capacitorconstructions 42 or digit lines 44 to define various memory cell unitsof the DRAM memory array.

An isolation region 38 extends between transistor constructions 14 and16, and can be utilized to electrically isolate such transistorconstructions from one another. Isolation region 38 comprises stack 36similar to stacks 22 of gate constructions 14 and 16. Stack 36 comprisesthe insulative material 24, conductive mass 28 and insulative cap 34utilized in gate stacks 22. However, in particular embodiments stack 36can differ from gate stacks 22 in having a heavily doped material 40which is differentially doped than the material 26 of stacks 22.

In particular aspects, material 40 can comprise silicon doped withsignificant concentrations of an opposite type dopant as that primarilyutilized in source drain regions 34. For instance, if source/drainregion 34 primarily comprised n-type dopant, material 40 can primarilycomprise p-type dopant. The utilization of p-type dopant as a majoritydopant within doped gate layer 40, while having source/drain regions 34with n-type dopant as majority dopant, can cause stack 40 to have a highthreshold voltage relative to adjacent devices. This can enable stack 36to function primarily as an isolation region at particular thresholdvoltages utilized to drive adjacent devices, rather than as a transistorconstruction. In some aspects of the invention, material 40 can comprisesignificant concentrations of both p-type and n-type dopant, and can,for example, comprise concentrations from 1×10¹⁸ atoms/cm³ to 5×10²¹atoms/cm³ of both p-type and n-type dopants. Typically, a concentrationof the dopant can be about 1×10²⁰ atoms/cm³.

In particular embodiments of the present invention, material 40 cancomprises essentially one type of dopant (i.e. at least 99% of thedopant within material 54 can be p-type) or material 40 can effectivelycomprise two types of dopant (in other words, less than 99% of thedopant within material 40 is p-type). Alternatively, material 40 can bemajority n-doped arid coupled to a suitable electrical bias so thatisolation device 38 appropriately functions as a grounded gate.

If stack 36 is utilized as an isolation region, it can be described asan isolation region having a mass 40 of material extending between apair of adjacent source/drain regions 34. Further, the adjacentsource/drain regions can, as shown, extend the full spacer-width underspacers 32 associated with stack 36. Alternatively, the adjacentsource/drain regions 32 can extend a partial spacer-width beneathspacers 32 or can extend under the gate electrode (i.e. can extend undermass 40).

Stack 36 is shown having conductive layer 28 in contact with otherelectrical circuitry 48. In embodiments in which stack 36 is utilized asan isolation region, the other circuitry 48 can be an electrical groundassociated with construction 10, or can be slightly positive or negativerelative to ground as long as device 36 does not turn on an underlyingchannel.

As a result of the dopant variation within layer 40 (relative to layers26 of gate stacks 22) the apparent or effective thickness of gate oxide24 within stack 36 can change relative to that of stacks 22. In otherwords, even though gate oxide 24 has the same physical thickness instacks 22 and stack 36, the effective electrical thickness of the gateoxide will be increased in stack 36 relative to stacks 22.

In particular aspects of the present invention, there is an effectivedopant depletion relative to an interface between gate oxide 24 andsilicon layer 40. Specifically, silicon layer 40 has a lower effectiveconcentration of n-type dopant than do silicon layers 26. Such can beaccomplished by initially providing layer 40 to have the same n-typedopant concentration as do layers 26, and subsequently adding sufficientp-type dopant to layer 40 to alter electrically properties of layer 40.The p-type dopant concentration can be sufficient to overwhelm then-type dopant concentration (i.e. to form the p-type dopant as themajority dopant in layer 40), or alternatively can be sufficient tosimply have a measurable effect on the work function of a transistorconstruction comprising stack 36.

A doped pocket region 46 can be provided within a semiconductivematerial of substrate 12 beneath isolation structure 38. Doped pocketregion 46 can be doped with a heavy p-type atom such as, for instance,indium. Optionally, doped region 46 can additionally be doped with atleast one other p-type dopant such as, for example, boron. It can beadvantageous to provide indium or other heavy p-type dopant, such as Gaor TI, in the pocket region 46 beneath isolation structure 38 toincrease the threshold voltage of isolation gate 36. Further, indiumwithin pocket region 46 can enhance retention of dopant centrallybeneath isolation device 38. The relatively low diffusivity of indiumcan minimize diffusion of dopant toward the storage node junction andthereby minimize junction leakage. When used in conjunction with anadditional p-type dopant such as, for example, boron, a lower dosage ofthe additional p-type dopant can be utilized relative to concentrationstypically used to minimize charge leakage between nodes across agrounded gate device 38.

Indium can be provided within pocket region 46 to a concentration offrom about 1×10¹² atoms/cm³ to about 1×10¹³ atoms/cm³. If pocket region46 is additionally doped with boron, boron can be provided to aconcentration of from about 1×10¹² atoms/cm³ to about 2×10 ¹² atoms/cm³.

Activation of implanted indium can comprise activation by thermalprocessing at a temperature of about 900° C. for between about 1 minuteand about 6 minutes, preferably from about 1 minute to about 2 minutes.Such activation can occur during a reflow of borophosphosilicate glass(BPSG) or can occur in an independent step.

Doped region 46 preferably has a lateral widths that is less than thewidth of gate stack 36. Preferably, pocket region 46 is substantiallycentered beneath device 38 and comprises a lateral width that is lessthan or equal to the total width of device 38, the total width of device38 being the furthest distance between outer edges of the pair ofsidewall spacers 32 associated with gate stack 36. In a preferredconfiguration, the heavy p-type atom dopant in doped region 46 isseparated from each neighboring source/drain region 34 by a gap.

It is noted that in embodiments where boron is implanted into dopedpocket region 46, at least some of the initially implanted boron candiffuse outwardly from region 46 during activation or other thermalprocessing. In preferred embodiments however, heavy p-type dopantremains substantially within pocket region 46, thereby avoiding highconcentrations of p-type dopant at or near the storage node junctions.Accordingly, the doped pocket region can be referred to as a sub-regionof a doped region.

Although FIG. 1 shows heavily doped material 40 of gate stack 36utilized in conjunction with doped channel region 46, the inventionencompasses embodiments wherein material 40 is substituted withalternative conductively doped semiconductor material such as thematerial utilized for layer 26 in gate stacks 22.

In addition to the features shown in FIG. 1, construction 10 cancomprise doped channel regions within regions of substrate 12 underlyingstacks 22 (not shown). In particular embodiments, doped channel regionsbeneath the transistor devices can be doped with a non-heavy p-typedopant such as, for example boron. Such boron doped channel regions canlack additionally added heavy p-type dopants and can have boronimplanted to a concentration of from about 5×10 ¹² atoms/cm³ to about9×10¹² atoms/cm³.

In the shown construction 10, material 40 is physically againstinsulative mass 24, and conductive mass 28 is physically againstmaterial 40. Further, conductive mass 28 can comprise a silicide layerwhich is formed directly on (physically against) layer 40, and canfurther comprise a metal layer, metal compound layer, and/or metal alloylayer which is formed over and physically against the silicide layer.

Stack 36 can be considered to be within a DRAM array, and the array canbe, for example, a 6 F² or 8 F² array.

A method of forming the construction of FIG. 1 is described withreferences to FIGS. 2-13. In describing FIGS. 2-13, similar numberingwill be used as was utilized above in describing FIG. 1, as appropriate.

Referring initially to FIG. 2, wafer construction 10 is shown at apreliminary processing stage. Construction 10 comprises substrate 12,insulative layer 24, and a masking material 102 formed over insulativelayer 24. Masking material 102 can comprise, for example, eitherpositive or negative photoresist, and in particular embodiments cancomprise M108Y™ from JSR™ Corporation of Japan. Referring to FIG. 3,photoresist 102 is photolithographically patterned into a pair ofadjacent and spaced blocks 104 and 106. Block 104 has a sidewall edge105 and a top edge 107. It is to be understood that the term “block” isutilized herein to generically refer to any patterned shape, includingfor example, rectangular shapes, square shapes or shapes with curvededges.

In the shown embodiment, blocks 104 and 106 are formed in physicalcontact with insulative material 24. It is to be understood that theinvention encompasses other embodiments (not shown) wherein maskingmaterial 102 is formed directly on a semiconductive material ofsubstrate 12 in the absence of insulative layer 24 to result in blocksthat are physically against substrate 12.

A gap 110 extends between patterned blocks 104 and 106, and in the shownembodiment an upper surface 112 of insulative material 24 is exposedwithin gap 110. Patterned blocks 104 and 106 can be considered to covera first portion of insulative layer 24, and to leave a second portion oflayer 24 uncovered. In embodiments having material 102 formed in anabsence of layer 24 (not shown), patterned blocks 104 and 106 can covera first portion of substrate 12 and leave a second portion of thesubstrate material uncovered.

Referring to FIG. 4, a coating 114 is formed over patterned photoresistblocks 104 and 106, and within gap 110. Coating 114 covers at least someof the portion of insulative material 24 that is exposed between blocks104 and 106, and in the shown embodiment covers all of the exposedportion of insulative material 24. Coating 114 is a material other thanphotoresist, and in particular applications, corresponds to a materialdesignated as AZ R200™ by Clariant International, Ltd. Coating 114 isphysically against photoresist blocks 104 and 106, and corresponds to amaterial which can be selectively removed from over exposed portion 112of insulative material 24, while remaining adhered to the photoresist ofblocks 104 and 106.

In one aspect of the invention, coating 114 corresponds to the materialdesignated as AZ R200™, and is coated across an entirety of asemiconductive wafer, and is subsequently spun dry. It is noted that AZR200™ is a water-based material, so it is preferable to conduct theprocedures associated with AZ R200™ in a separate chamber from theprocedures utilized in exposing and developing photoresist, since watercan interfere with standard photoresist processing. Accordingly, apreferred process of the present invention comprises forming aphotoresist mass 102 and photolithographically processing such mass in aseparate “bowl” or chamber from that utilized during formation ofcoating 114.

After coating 114 is formed, semiconductor construction 10 is baked at atemperature of from about 100° C. to about 120° C. Such baking isthought to diffuse acid from resist 102 into the AZ R200™, and crosslinkthe layer of AZ R200™ across resist blocks 104 and 106. The crosslinkingcan bond the coating to blocks 104 and 106 and/or form the coating intoa shell tightly adhered with blocks 104 and 106. The material designatedas AZ R200™ is but one material which can be utilized in methodology ofthe present invention. Other materials which selectively bond or adhereto photoresist blocks 104 and 106 can be used alternatively to thematerial designated as AZ R200™.

Referring to FIG. 5, coating 114 is exposed to conditions whichselectively remove the coating from between blocks 104 and 106, whileleaving a layer of the coating against blocks 104 and 106. Inapplications in which the coating comprises AZ R200™, such removal canbe accomplished by exposing semiconductor construction 10 to an aqueoussolution comprising surfactant. Such solution can selectively remove anon-crosslinked portion of coating 114. A suitable aqueous surfactantsolution is the material marketed as “SOLUTION C™” by ClariantInternational, Ltd. In applications in which AZ R200™ is utilized,construction 10 can be subjected to a so-called hard bake at atemperature of from about 130° C. to about 140° C. after removal of thenon-crosslinked material. Such hard bake can fully dry and furthercrosslink the portions of coating 114 remaining around blocks 104 and106.

The coating 114 remaining around a photoresist block can be consideredto define a second block which extends laterally outward beyond edges ofthe photoresist block. Specifically, the coating 114 over photoresistblock 104 defines lateral edge 116 which extends laterally outwardbeyond lateral edge 105 of block 104, and also defines a top edge 115which extends elevationally above the top edge 107 of block 104.Similarly, the coating 114 around block 106 comprises a lateral edge 119which extends laterally outward beyond the lateral edge 109 of block106, and further comprises a top edge 117 which is elevationally abovethe top edge 111 of block 106.

Photoresist block 104 and the coating 114 surrounding such photoresistblock together define a masking block which is enlarged and laterallywider than was photoresist block 104. Also, photoresist block 106 andthe coating 114 surrounding such photoresist block together define amasking block 120 which is enlarged and laterally wider than photoresistblock 106. Masking blocks 118 and 120 (also referred to as enlargedblocks) have a narrower gap between them than did photoresist blocks 104and 106. In other words coating 114 narrows gap 110 to reduce adimension of such gap.

Referring to FIG. 6, a dopant 122 is implanted relative to construction10. Masking blocks 118 and 120 prevent the dopant from being implantedinto the blocked regions of construction 10. The unblocked regioncorresponds to a region within a surface area where stack 36 (FIG. 1) isultimately to be formed. Implanting dopant 122 forms a doped pocketregion 46 as shown in FIG. 7. Doped pocket region 46 has a widthcorresponding to the narrowed width of gap 110.

Referring again to FIG. 6, dopant 122 can comprise a single heavy p-typedopant such as indium or can comprise both a heavy p-type dopant and anadditional p-type dopant such as, for example, boron. Although FIGS. 6and 7 depict formation of doped pocket region 46 as utilizing a singledoping step, it is to be understood that the present inventionencompasses alternative embodiments (not shown), wherein two or moreimplanting steps are utilized to implant dopant into region 46. Forexample, a non-heavy p-type dopant such as boron for example can beimplanted into exposed region 112 (FIG. 3) prior to forming coatinglayer 114 over photoresist blocks 104 and 106. Alternatively, a seconddopant can be implanted after formation of enlarged blocks 118 and 120but in an independent step either prior to or subsequent to doping withthe heavy p-type dopant.

Dopant 122 can be activated by thermal processing at a temperature offrom about 900° C. for about 1 minute to about 6 minutes, preferablyfrom about 1 minute to about 2 minutes. Activation of dopant 122 canoccur during reflow of BPSG or in an independent step.

Referring to FIG. 8, materials 102 and 114 (FIG. 5) are removed fromover substrate 12.

The present invention can advantageously form doped pocket regions thatare narrower than can be accomplished utilizing photolithographicprocessing alone. Specifically, if photoresist blocks 104 and 106 (FIG.3) are considered to be as close to one another as is possible by aparticular photolithographic patterning process, then processing of thepresent invention has effectively defined new masking blocks 118 and 120(FIG. 5) which are closer together than could be achieved byphotolithographic processing alone. In other words, if gap 110 wasinitially formed to have a minimum feature size achievable byphotolithographic processing, then the formation of coating 114 haseffectively reduced the feature size of gap 110 to below the minimumachievable feature size. In particular embodiments, the reduced width ofgap 110 between blocks 118 and 120 can be less than or equal, to abouthalf the width of gap 110 between blocks 104 and 106 prior to theformation of coating 114.

In embodiments wherein layer 102 was formed over substrate 12 in anabsence of insulative material 24 (not shown), such insulative layer canbe formed after the removal of materials 102 and 114 prior to subsequentprocessing.

In embodiments of the invention having doped channel regions (not shown)underlying gate stacks 22 (FIG. 1) wherein the channel regions are dopedonly with non-heavy p-type dopants, such channel regions can be formedby implanting dopant into the appropriate areas of the substrate afterremoval of materials 102 and 114. Alternatively, such channels can beformed prior to formation of layer 102. Formation of such channelregions can comprise implanting boron to a concentration of from about5×10¹² atoms/cm³ to about 9×10¹² atoms/cm³.

Referring to FIG. 9, mass 124 is formed over insulative layer 24. Mass124 can be undoped as initially deposited, or alternatively can be insitu doped. In the shown application, mass 124 is undoped, andaccordingly has not acquired the properties of either mass 26 (FIG. 1),or mass 40 (FIG. 1).

A patterned masking material 126 is formed over mass 124, and suchblocks portions of mass 124. Masking material 126 can comprise, forexample, photoresist and can be formed into the shown pattern by, forexample, photolithographic processing. Masking material 126 covers aportion of construction 10 where stack 36 is ultimately to be formedwhile leaving other portions of construction 10 uncovered.

Referring to FIG. 10, a dopant 127 is implanted into construction 10,and specifically is implanted into portions of material 124 (FIG. 9)which are not covered by mask 126. Such converts the material 124 tomaterial 26. Dopant 127 can comprise, for example, n-type dopant (suchas phosphorous or arsenic). Dopant 127 can be provided to aconcentration of at least 1×10²⁰ atoms/cm³, and typically is provided toa concentration of from about 1×10²⁰ atoms/cm³ to about 5×10²¹atoms/cm³.

Referring to FIG. 11, masking material 126 is removed and replaced byanother patterned masking material 128. Masking material 128 cancomprise, for example, photoresist and can be formed into the shownpattern by, for example, photolithographic processing. Masking material128 covers some portion (of construction 110 while leaving a portionwhere stack 36 is ultimately to be formed uncovered.

A dopant 129 is implanted into construction 10, and specifically isimplanted into portions of material 124 (FIG. 9) which are not coveredby mask 128. Such converts the material to material 40. Dopant 129 cancomprise an opposite conductivity type relative to dopant 127. Further,dopant 129 can be implanted to a concentration greater than 1×10²⁰atoms/cm³.

In particular applications mask 126 (FIG. 9) can be eliminated, anddopant 127 implanted into an entirety of material 124 (FIG. 9).Subsequently, mask 128 can be formed and dopant 129 implanted at aconcentration higher than that of dopant 127. The dopant 129 can theneffectively overwhelm the dopant 127 within exposed (unblocked) regionof construction 10 to form doped materials 40 and 26.

Referring to FIG. 12, masking material 128 (FIG. 11) is removed. Layers28 and 30 are formed across construction 10. As discussed above, layer28 can comprise silicide, metal, metal compounds and/or metal alloys;and layer 30 can comprise an insulative material such as, for example,silicon dioxide and/or silicon nitride.

Referring to FIG. 13, stacks 22 and 36 are patterned from the layers 24,26, 28, 30 and 40 of FIG. 12. Such patterning can be accomplished by,for example, forming a patterned photoresist mask (not shown) over thelayers, and subsequently transferring a pattern from the mask throughthe layers utilizing suitable etching conditions.

The stacks 22 and 36 can be incorporated into the constructions of FIG.1 by forming source/drain regions 34 (shown in FIG. 1) within substrate12, and forming sidewall spacers 32 (shown in FIG. 1). Source/drainregions 34 preferably can be formed to extend beneath sidewall spacers32 of the of the corresponding transistor device 14 and 16 or isolationdevice 38, without extending beneath the corresponding stack 22 or 36.

Another application of the invention is described with reference toFIGS. 14-20. Similar numbering will be utilized in describing FIGS.14-20 as was used above in describing FIGS. 1-13 where appropriate.

Construction 10 shown in FIG. 14 can comprise all of the features shownin FIG. 1, and can additionally comprise one or both of channel pocketimplants 45 and 47 within channel regions underlying transistor gatestacks 22. Channel pocket regions 45 and 47 can comprise implants ofheavy p-type atoms such as, for example, indium. In particularembodiments, doped pocket regions 45 and 47 and the correspondingsurrounding channel area can be additionally doped with a second p-typedopant such as, for example, boron. It can be advantageous to utilizeindium pocket implants within a boron doped channel region of transistordevices to decrease the concentration of boron utilized in the channelregion. For example, in embodiments of the present invention whereinchannel pocket regions 45 and 47 are implanted to an indiumconcentration of from about 1×10¹² atoms/cm³ to about 1×10¹³ atoms/cm³,the boron dose utilized in the channel region can be from about 1×10¹²atoms/cm³ to about 2×10¹² atoms/cm³ relative to typical boron dosed offrom about 5×10¹² atoms/cm³ to about 1×10¹³ atoms/cm³ that are utilizedin channel regions in the absence of the channel pockets 45 and 47 ofthe present invention.

A method for forming the construction of FIG. 14 is described withreference to FIGS. 15-20. In general, the methods utilized in formingthe construction shown in FIG. 14 can be as described above in referenceto formation of the FIG. 1 construction, combined with the followingalternative processing steps. Referring initially to FIG. 15, waferconstruction 10 is shown at an alternative processing stage subsequentto FIG. 2. Masking material 102 (FIG. 2) can be patterned utilizingsuitable photolithographic processes to form spaced blocks 203, 204, 206and 208. Gaps 210 extend between patterned blocks 203 and 204, betweenpatterned blocks 204 and 206, and between patterned blocks 206 and 208.In the shown embodiment, an upper surface 212 of insulative layer 24 isexposed within gaps 210. Alternatively, patterned blocks 203, 204, 206and 208 can be formed in the absence of layer 24 (not shown) and uppersurface 212 can comprise a semiconductive material of substrate 12.

Referring to FIG. 16, coating 114 is formed over patterned photoresistblocks 203, 204, 206 and 208, and within gaps 210. As discussed above,coating 114 can be selectively removed from between the patternedphotoresist blocks thereby forming the narrowed gaps 210 as shown inFIG. 17. In particular embodiments, narrowed gaps 210 can comprise awidth that is less than or equal to about half the width of the gapsprior to formation of coating 114. As additionally shown in FIG. 17,selective removal of coating 114 can form enlarged blocks 218, 219, 220and 221.

Referring to FIG. 18, a dopant 122 is implanted into construction 10,and specifically is implanted into portions of substrate 12 which arenot covered by mask blocks 218,219, 220 and 221.

Referring to FIG. 19, dopant 122 (FIG. 18) is implanted to form channelpocket regions 45 and 47, and pocket region 46. Such pocket regions havea width corresponding to the width of narrowed gap 210. As discussedabove, dopant 122 can comprise indium and in particular embodiments canadditionally comprise an additional p-type dopant such as, for example,boron. Accordingly, pocket regions 45, 46 and 47 can be implanted withindium in the absence of additional dopants or can simultaneously beimplanted with both indium and, for example, boron. Doped pocket region46 corresponds to a region of the substrate which will eventuallyunderlie isolation device 38 (FIG. 14). Doped channel pocket region 45is substantially centrally located within a channel region that willeventually be associated with transistor device 14 (FIG. 14). Similarly,channel pocket region 47 corresponds to a substantially centeredsub-region within a channel region that will eventually underlietransistor device 16 (FIG. 14).

It is noted that boron and/or other dopants can be implanted into atleast one of the channel regions that will underlie devices 14 and 16,or the corresponding region beneath isolation device 38, in anindependent doping step that is independent from implanting dopant 122.Such independent step can occur prior to formation of resist blocks 203,204, 206 and 208 (FIG. 15) or can occur after formation of the patternedresist blocks but prior to formation of enlarged blocks 218, 219, 220and 221 (FIG. 17). Alternatively, the independent doping can occur afterformation of enlarged masking blocks 218, 219, 220 and 221 in anindependent step prior to or subsequent to indium implant 122.

Activation of indium can comprise heat processing as described above.Preferably, indium diffusion from the pocket region into the surroundingsubstrate is minimized. In embodiments having boron additionallyimplanted, indium doped pockets 45 and 47 can be sub-regions of largerchannel regions formed by boron diffusion. In preferred embodiments, thedoped pockets 45, 46, and 47 remain narrower than width of the overlyingstack. In particular embodiments, the width of the pockets will remainabout the width of narrowed gap.

Referring to FIG. 20, masking blocks 218, 219, 220 and 221 are removedfrom over substrate 112. Semiconductor construction 10, as shown in FIG.20, can then be processed as discussed above (FIGS. 10-13 andcorresponding text) to form the constructions shown in FIG. 14. It canbe advantageous to provide indium within channel pocket regionsassociated with transistor devices to allow a lower concentration ofboron or other p-type dopant to be utilized in the channel region,thereby decreasing the amount of dopant that can diffuse toward thestorage node junction. High concentrations of p-type dopants at orsurrounding a storage node junction can increase charge leakage.Accordingly, decreasing an amount of high diffusivity dopant such as,for example, boron, utilized in the channel region can assist indecreasing leakage.

FIG. 21 shows an alternative semiconductor construction 10 that can beformed utilizing methods of the present invention. The constructionshown in FIG. 21 can be identical to the construction shown in FIG. 14with an exception being the absence of the pocket implant regionunderlying isolation device 38. Although FIG. 21 depicts a completeabsence of pocket implant beneath the isolation device, the inventionencompasses constructions having a pocket lightly doped with indium(i.e. less than about 1×10¹² atoms/cm³, not shown). In constructions ofthe present invention having a lightly doped indium pocket or an absenceof doped pocket beneath isolation device 38, the isolation device cancomprise a majority p-type doped layer 40 (discussed above). As will beunderstood by those of ordinary skill in the art, construction 10 ofFIG. 21 can be formed utilizing the methods discussed with reference toFIGS. 15-20 above combined with alternative photolithographic patterningof the masking material 102 (FIG. 2). Such alternate patterning canexpose regions of the substrate corresponding to the eventual locationof transistor devices 14 and 16 while covering other areas of thesubstrate, including the area that will eventually underlie isolationdevice 38.

FIG. 22 illustrates a semiconductor construction 10 encompassed byanother aspect of the present invention. Construction 10, as shown inFIG. 22 can be formed by optional processing steps in addition to thosedescribed with reference to forming the construction shown in FIG. 14.As shown in FIG. 22, at least some of the source/drain regions 34present in construction 10 can comprise extension regions 50, 52 whichcan extend the associated source/drain region farther beneath anassociated gate device 14, 16. Extension regions 50 and 52 can extendthe associated source/drain region 34 such that the source drain regionextends the full width of an overlying spacer 32. Alternatively, theextensions can extend the source/drain region to less than the fullspacer width beneath the corresponding device, or can extend thesource/drain region partially beneath gate stack 22.

In particular embodiments, source/drain regions 34 can be majority dopedwith n-type dopant, and extension regions 50 and 52 can be majoritydoped with a p-type dopant. In preferred embodiments, extensions 50 and52 can comprise a heavy p-type dopant such as, for example, indium. Anappropriate indium concentration within the extensions can be from about1×10¹² atoms/cm² to about 3×10¹² atoms/cm².

As shown in FIG. 22, semiconductor construction 10 comprisingsource/drain extensions 50, 52 can be formed to have such extensionsbeneath only one of the pair of sidewalls 32 associated with a givenstack 22. In other words, extension implants 50, 52 can be provided on asingle side of a corresponding transistor device. 14, 16. Preferably, asshown in FIG. 22, extensions 50 and 52 are provided only on bit contactsides of gates 14 and 26 and are absent from the source/drain region onthe opposing storage node sides of the gates. It can be advantageous toutilize indium implant extensions of source/drain regions associatedwith bit contact sides of transistor devices 14 and 16 to allow areduction in the amount of indium utilized in channel pocket implants 45and 47. In the presence of extensions 50 and 52, pocket channel regions45 and 47 can comprise an indium concentration of from about 2'10¹²atoms/cm² to about 5×10¹² atoms/cm² and can additionally comprise boronat the concentrations set forth above with respect to the semiconductorconstruction shown in FIG. 14.

A method of forming the construction of FIG. 22 is described withreference to FIGS. 23-24. Referring to FIG. 23, such illustrates furtherprocessing of a construction similar to that shown in FIG. 14 prior toconnection to any capacitor construction or digit lines. A maskingmaterial 174 is formed over construction 10 and is patterned to exposeportions of the substrate on what will be future bit line contact sidesof transistor devices 14 and 16. Masking material 174 can comprise, forexample, photoresist; and can be patterned utilizing suitablephotolithographic processes.

A dopant 176 is implanted relative to construction 10 and formsextension regions 50 and 52 shown in FIG. 24. Dopant 176 can beimplanted using angled implant techniques typically utilized for forminghalo implants relative to a gate. Implant regions 50 and 52 differ fromtypical halo implants, however, in that implants 50 and 52 do not form aring shaped structure since dopant is implanted only on one side of thecorresponding gate, the opposing side of the gate being blocked bymasking material 174. Dopant 176 can comprise a p-type dopant andpreferably comprises a heavy p-type dopant such as indium.

The semiconductor construction shown in FIG. 24 can be further processedto remove photoresist material 174 and to form the construction shown inFIG. 22.

FIG. 25 illustrates a semiconductor construction 10 encompassed byanother aspect of the present invention and will be described usingsimilar numbering as was used above in FIGS. 1-24 where appropriate. Theconstruction 10 shown in FIG. 25 is similar to the constructionillustrated in FIG. 22 with an exception being the presence of a shallowtrench isolation region 54 in place of the isolation device 38 (FIG.14).

As will be understood by those skilled in the art, construction 10 asshown in FIG. 25 can be formed utilizing conventional shallow trenchisolation region formation combined with various methods of the presentinvention described above. Shallow trench region 54 can be formed at aninitial processing step prior to formation of patternable material 102(FIG. 2). Material 102 can then be patterned by methods discussed aboveto expose the regions of substrate while leaving other regions covered.Coating material 144 can be formed and processed to expose regions thatwill eventually underlie central portions of stacks 22 while otherregions, including the shallow trench isolation region, remain masked.Channel pockets 45 and 47 can then be formed as described above,followed by formation of the additional features shown in FIG. 25.

Although FIGS. 22 and 25 show implant extensions 50 and 52 beingutilized in conjunction with channel pocket regions 45 and 47, it is tobe understood that the invention encompasses embodiments whereinextensions 50 and 52 are utilized in semiconductor constructions in anabsence of the described pocket regions 45 and 47.

In addition to the above described embodiments, the invention includesdamascene processes for forming gate constructions. An exemplary methodof forming a construction utilizing a damascene process is describedwith reference to FIGS. 26-29.

Referring to FIG. 26, an initial step can comprise depositing a layer ofdielectric material 202 over insulative material 24. Alternatively,dielectric layer 202 can be deposited on substrate 12 in an absence ofan insulative layer and insulative material 24 can be grown after thedamascene process. Source-drain regions 34 can be present prior todepositing dielectric layer 202 as shown in FIG. 26, or can be formedduring or after gate formation.

Dielectric material 202 can be patterned by conventional methods, suchas photolithography, to form patterned blocks 203 and 205, the blockshaving sidewalls 204 and 206 being separated by a gap. Removable spacers208 can be formed along sidewalls 204 and 206. Removable spacers 208 canbe formed for example, by depositing a layer of sacrificial material andanisotropically etching the sacrificial material. Spacers 208 havelateral edges 209 and 211 that are separated by a narrowed gap relativeto the distance between sidewalls 204 and 206. A dopant 122 (discussedabove) is implanted relative to construction 10 to form a doped pocketregion 212 as shown in FIG. 27. Doped pocket region 212 has a widthcorresponding to the width between lateral edges 209 and 211.

Referring to FIG. 27, spacers 208 are removed and a layer of polysilicon214 is conformally deposited over construction 10 and along sidewalls204 and 206. A gate electrode material 216, such as WN/W or othercompositions comprising a metal and/or metal nitride, can be depositedover polysilicon layer as shown in FIG. 28.

Referring to FIG. 29, a planarization step utilizing for examplechemical mechanical polishing is performed to form the planarized gatestructure having a metal gate electrode 220 as shown. The gate structurecan have a gate structure width corresponding to the distance betweenthe sidewalls 204 and 206. Accordingly, doped pocket region 212 can havea width that is less than the width of the gate structure and inparticular embodiments, pocket region 112 can comprise a width less thanor equal to about half the width of the gate structure.

A channel region which underlies the damascene gate structure andsurrounding pocket (shown in FIG. 29) region can additionally compriseboron as discussed above relative to gate stack structures 22 and 36.Source-drain extensions (not shown) can be utilized in conjunction withthe gate and can be formed as described above.

In compliance with the statute, the invention has been described inlanguage more or less specific as to structural and methodical features.It is to be understood, however, that the invention is not limited tothe specific features shown and described, since the means hereindisclosed comprise preferred forms of putting the invention into effect.The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents.

1-21. (canceled)
 22. A semiconductor construction comprising: asemiconductive material substrate; a first and a second transistorconstruction over the semiconductive substrate material, each of thefirst and second transistor constructions having opposing sidewalls witha pair of insulative spacers along the sidewalls; a first and a secondsource/drain region within the substrate, the first transistorconstruction being disposed between the first and the secondsource/drain regions, a first end of the first source/drain regionextending beneath the spacer on a first side of the first transistorconstruction and the second source/drain region extending beneath thespacer on an opposing second side of the first transistor construction;a third and a fourth source/drain region within the substrate, thesecond transistor construction being disposed between the third andfourth source/drain regions, a first side of the fourth source/drainregion extending beneath the spacer on a first side of the secondtransistor construction, and the third source/drain region extendingbeneath the spacer on an opposing second side of the second transistorconstruction; the first, second, third and fourth source/drain regionsbeing commonly doped with a first type of dopant; a source/drainextension associated with the first side of the first source/drainregion, the source/drain extension being doped with a second type ofdopant and extending the first side of the first source/drain regionfarther beneath the first transistor construction; extensions beingabsent from a second side of the first source/drain region, and absentfrom the second source/drain region.
 23. The semiconductor constructionof claim 22 further comprising channel regions defined within thesubstrate beneath each of the first and second transistor constructionsat least a portion of the channel regions being doped with indium. 24.The semiconductor construction of claim 22 further comprising asource/drain extension associated with the first side of the fourthsource/drain region, the source/drain extension being doped with asecond type of dopant and extending the first side of the fourthsource/drain region farther beneath the second transistor construction;extensions being absent from a second side of the fourth source/drainregion, and absent from the third source/drain region.
 25. Thesemiconductor construction of claim 22 further comprising an isolationstructure between the first and second transistor constructions.
 26. Thesemiconductor construction of claim 25 further comprising a doped pocketregion within the semiconductive material beneath the isolationstructure, at least a portion of the pocket region being doped withindium.
 27. The semiconductor construction of claim 25 wherein theisolation structure comprises a first conductively-doped materialseparated from a second conductively-doped material by an interveninginsulative material; the first conductively-doped material being dopedto at least 1×10¹⁸ atoms/cm³ with n-type dopant and to at least 1×10¹⁸atoms/cm³ with p-type dopant.
 28. The semiconductor construction ofclaim 27 wherein a majority dopant in the first conductively dopedmaterial is p-type.
 29. The semiconductor construction of claim 28having an absence of any indium implant beneath the isolation structure.30. The semiconductor construction of claim 28 having a lightly dopedindium implant beneath the isolation structure.
 31. The semiconductorconstruction of claim 22 further comprising a shallow trench isolationregion between the first and the second transistor constructions. 32-64.(canceled)